lu s250, lv s260, lw s260 sot-23 multiled ? , diffused nicht fr neuentwicklungen / not for new designs 2000-03-01 1 opto semiconductors besondere merkmale ? geh?usetyp: eingef?rbtes, diffuses sot-23-geh?use ? besonderheit des bauteils: kleine bauform im industriestandard: 3,0 2,6 1,1 mm mit 2 chips ? wellenl?nge: 628 nm (super-rot), 570 nm (grn) ? abstrahlwinkel: 140 ? technologie: gaalp ? optischer wirkungsgrad: 1,5 lm/w (super-rot), 2,5 lm/w (grn) ? gruppierungsparameter: lichtst?rke ? verarbeitungsmethode: fr alle smt-bestcktechniken geeignet ? l?tmethode: ir reflow l?ten ? vorbehandlung: nach jedec level 2 ? gurtung: 8-mm gurt mit 3000/rolle, ?180 mm oder 12000/rolle, ?330 mm anwendungen ? optischer indikator ? hinterleuchtung (lcd, handy, schalter, tasten, displays, werbebeleuchtung, allgemeinbeleuchtung) ? leuchtdiodenchips getrennt ansteuerbar features ? package: colored, diffused sot-23 package ? feature of the device: small package in industry standard 3.0 2.6 1.1 mm with two chips ? wavelength: 628 nm (super-red), 570 nm (green) ? viewing angle: 140 ? technology: gaalp ? optical efficiency: 1.5 lm/w (super-red), 2.5 lm/w (green) ? grouping parameter: luminous intensity ? assembly methods: suitable for all smt assembly methods ? soldering methods: ir reflow soldering ? preconditioning: acc. to jedec level 2 ? taping: 8-mm tape with 3000/reel, ?180 mm or 12000/reel, ?330 mm applications ? optical indicators ? backlighting (lcd, cellular phones, switches, keys, displays, illuminated advertising, general lighting) ? led chips can be controlled separately
2000-03-01 2 opto semiconductors lu s250, lv s260, lw s260 helligkeitswerte werden mit einer stromeinpr?gedauer von 25 ms und einer genauigkeit von 11 % ermittelt. luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. typ type emissionsfarbe color of emission geh?usefarbe color of package lichtst?rke luminous intensity i f = 10 ma i v (mcd) bestellnummer ordering code lu s250-do super-red/green colorless diffused 3 0.45 q62703-q1642 lv s260-do super-red/ super-red red diffused 3 0.45 q62703-q2067 lw s260-do green/green green diffused 3 0.45 q62703-q1038
lu s250, lv s260, lw s260 2000-03-01 3 opto semiconductors grenzwerte maximum ratings bezeichnung parameter symbol symbol wert value einheit unit betriebstemperatur operating temperature range t op C 40 + 100 c lagertemperatur storage temperature range t stg C 40 + 100 c sperrschichttemperatur junction temperature t j + 100 c durchla?strom forward current i f 30 ma sto?strom surge current t 10 m s, d = 0.005 i fm 0.5 a sperrspannung reverse voltage v r 5v leistungsaufnahme power dissipation t a 25 c p tot 95 mw w?rmewiderstand thermal resistance sperrschicht/umgebung junction/ambient sperrschicht/l?tpad junction/soldering point montage auf pc-board fr 4 (padgr??e 3 16 mm 2 ) mounted on pc board fr 4 (pad size 3 16 mm 2 ) r th ja r th ja r th js r th js 750 (one chip on) 1020 (two chips on) 350 (one chip on) 480 (two chips on) k/w k/w k/w k/w
2000-03-01 4 opto semiconductors lu s250, lv s260, lw s260 kennwerte ( t a = 25 c) characteristics bezeichnung parameter symbol symbol wert value einheit unit super-red green wellenl?nge des emittierten lichtes (typ.) wavelength at peak emission i f = 10 ma l peak 635 565 nm dominantwellenl?nge (typ.) dominant wavelength i f = 10 ma l dom 628 570 nm spektrale bandbreite bei 50% von i rel max (typ.) spectral bandwidth at 50% of i rel max i f = 10 ma dl 45 25 nm abstrahlwinkel bei 50 % i v (vollwinkel) (typ.) viewing angle at 50 % i v 2 j 140 140 grad deg. durchla?spannung (typ.) forward voltage (max.) i f = 10 ma v f v f 2.0 2.6 2.0 2.6 v v sperrstrom (typ.) reverse current (max.) v r = 5 v i r i r 0.01 10 0.01 10 m a m a temperaturkoeffizient von l peak (typ.) temperature coefficient of l peak i f = 10 ma tc l peak 0.11 0.11 nm/k temperaturkoeffizient von l dom (typ.) temperature coefficient of l dom i f = 10 ma tc l dom 0.07 0.07 nm/k temperaturkoeffizient von v f (typ.) temperature coefficient of v f i f = 10 ma tc v C 1.9 C 1.4 mv/k optischer wirkungsgrad (typ.) optical efficiency i f = 10 ma h opt 1.5 2.5 lm/w
lu s250, lv s260, lw s260 2000-03-01 5 opto semiconductors releative spektrale emission i rel = f ( l ), t a = 25 c , i f = 10 ma relative spectral emission v ( l ) = spektrale augenempfindlichkeit standard eye response curve abstrahlcharakteristik i rel = f ( j ) radiation characteristic % rel l ohl01702 100 80 60 40 20 0 400 450 500 550 600 650 700 nm i green super-red l v 0 0.2 0.4 1.0 0.8 0.6 j 1.0 0.8 0.6 0.4 0? 10? 20? 40? 30? ohl01693 50? 60? 70? 80? 90? 100? 0? 20? 40? 60? 80? 100? 120?
lu s250, lv s260, lw s260 2000-03-01 6 opto semiconductors durchla?strom i f = f ( v f ) forward current t a = 25 c maximal zul?ssiger durchla?strom i f = f ( t ) max. permissible forward current relative lichtst?rke i v / i v(10 ma) = f ( i f ) relative luminous intensity t a = 25 c maximal zul?ssiger durchla?strom i f = f ( t ) max. permissible forward current 10 -1 v 5 ohl01263 i f f v 0 10 1 10 2 10 5 ma 1 1.4 1.8 2.2 2.6 3 3.4 0 ohl01252 ?c t 0 20406080100 f i 5 10 15 20 25 30 35 1 chip on 2 chips on temp. ambient t a v v (10 ma) 10 -1 0 10 10 12 10 ma 10 -3 5 ohl01703 f i 5 -2 10 5 -1 10 0 10 1 10 i i 55 green super-red 0 ohl00954 ?c t 0 20406080100 f i 5 10 15 20 25 30 35 1 chip on 2 chips on temp. solder point t s
lu s250, lv s260, lw s260 2000-03-01 7 opto semiconductors relative lichtst?rke i v / i v(25 c) = f ( t a ) relative luminous intensity i f = 10 ma zul?ssige impulsbelastbarkeit i f = f ( t p ) permissible pulse handling capability duty cycle d = parameter, t a = 25 c green super-red 0 ohl01708 ?c a t 0 20406080100 v v (25 ?c) i i 0.4 0.8 1.2 1.6 2 ohl01686 s 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t d i t t p f t p = d = 0.005 0.01 0.02 0.05 0.2 0.5 dc 10 1 5 i f t 2 10 0.1 p 10 3 ma
2000-03-01 8 opto semiconductors lu s250, lv s260, lw s260 ma?zeichnung package outlines ma?e werden wie folgt angegeben: mm (inch) / dimensions are specified as follows: mm (inch). 3 12 m 0.25 (0.010) 0.50 (0.020) 0.35 (0.014) b c 0.95 (0.037) 1.9 (0.075) 3.0 (0.118) 2.8 (0.110) b c a 1.4 (0.055) 1.2 (0.047) 10? max a 0.2 (0.008) m gsoy6866 0.15 (0.006) 0.08 (0.003) 3 2 1 lu pin configuration approx. weight 0.01 g cathode: red cathode: green anode 10? max 2.6 (0.102) max. 1.1 (0.043) max. 0.1 (0.004) max. 2?...30?
lu s250, lv s260, lw s260 2000-03-01 9 opto semiconductors l?tbedingungen vorbehandlung nach jedec level 2 soldering conditions preconditioning acc. to jedec level 2 ir-reflow l?tprofil (nach ipc 9501) ir reflow soldering profile (acc. to ipc 9501) ohly0597 0 0 50 100 150 200 250 50 100 150 200 250 300 t t ?c s 240-245 ?c 10-40 s 183 ?c 120 to 180 s defined for preconditioning: up to 6 k/s ramp-down rate up to 6 k/s ramp-up rate up to 6 k/s defined for preconditioning: 2-3 k/s
2000-03-01 10 opto semiconductors lu s250, lv s260, lw s260 empfohlenes l?tpaddesign ir reflow l?ten recommended solder pad ir reflow soldering gurtung / polarit?t und lage verpackungseinheit 3000/rolle, ?180 mm oder 12000/rolle, ?330 mm method of taping / polarity and orientation packing unit 3000/reel, ?180 mm or 12000/reel, ?330 mm ohlp0976 0.8 0.9 0.9 1.0 0.8 1.2 reflow l?ten / reflow soldering oha00323 1.5 2 4 3.15 2.65 3.5 1.75 8 4 a c cc a ls/ly/lg s260, lu s250, lv/lw s260 ls/ly/lg s269
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